An RF GaN (Radio Frequency Gallium Nitride) device is a high-performance semiconductor used to amplify and switch high-frequency radio signals. While traditional silicon (Si) has reached its physical limits, GaN—a "Wide Bandgap" material—can handle much higher voltages, temperatures, and frequencies.
In 2026, RF GaN has officially replaced LDMOS (Silicon) as the "gold standard" for 5G-Advanced infrastructure and advanced defense systems.
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